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EGP30G

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onsemi EGP30G

onsemi EGP30G overview

ON Semiconductor EGP30G Rectifier Diode, Output Current-Max:3 A, Forward Voltage-Max (VF):1.3 V, Reverse Recovery Time-Max:50 ns, Power Dissipation-Max:6.25 W, ...

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Part number or familyEGP30G
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Manufactured byonsemi
Product groupModules
DescriptionON Semiconductor EGP30G Rectifier Diode, Output Current-Max:3 A, Forward Voltage-Max (VF):1.3 V, Reverse Recovery Time-Max:50 ns, Power Dissipation-Max:6.25 W, Diode Element Material:SILICON, Diode Type:RECTIFIER DIODE, Configuration:SINGLE, Surface Mount:NO, Rep Pk Reverse Voltage-Max:400 V, Number of Elements:1
DescriptionON Semiconductor EGP30G Discrete Semiconductor, DIODE GEN PURP 400V 3A DO201AD
DescriptionON Semiconductor EGP30G Rectifier Diode, Output Current-Max:3 A, Forward Voltage-Max (VF):1.3 V, Reverse Recovery Time-Max:50 ns, Power Dissipation-Max:6.25 W, Diode Element Material:SILICON, Diode Type:RECTIFIER DIODE, Configuration:SINGLE, Surface Mount:NO, Rep Pk Reverse Voltage-Max:400 V, Number of Elements:1

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