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EGP10J

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onsemi EGP10J

onsemi EGP10J overview

ON Semiconductor EGP10J Rectifier Diode, Output Current-Max:1 A, Forward Voltage-Max (VF):1.7 V, Reverse Recovery Time-Max:75 ns, Power Dissipation-Max:2.5 W, D...

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Part number or familyEGP10J
Product groupModules

Product details

Manufactured byonsemi
Product groupModules
DescriptionON Semiconductor EGP10J Rectifier Diode, Output Current-Max:1 A, Forward Voltage-Max (VF):1.7 V, Reverse Recovery Time-Max:75 ns, Power Dissipation-Max:2.5 W, Diode Element Material:SILICON, Diode Type:RECTIFIER DIODE, Configuration:SINGLE, Surface Mount:NO, Rep Pk Reverse Voltage-Max:600 V, Number of Elements:1
DescriptionON Semiconductor EGP10J Discrete Semiconductor, DIODE GEN PURP 600V 1A DO41
DescriptionON Semiconductor EGP10J Rectifier Diode, Output Current-Max:1 A, Forward Voltage-Max (VF):1.7 V, Reverse Recovery Time-Max:75 ns, Power Dissipation-Max:2.5 W, Diode Element Material:SILICON, Diode Type:RECTIFIER DIODE, Configuration:SINGLE, Surface Mount:NO, Rep Pk Reverse Voltage-Max:600 V, Number of Elements:1

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Product group Modules Explore Modules Explore Rectifier Diodes
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