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EGP10G

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onsemi EGP10G

onsemi EGP10G overview

ON Semiconductor EGP10G Rectifier Diode, Output Current-Max:1 A, Forward Voltage-Max (VF):1.3 V, Reverse Recovery Time-Max:50 ns, Power Dissipation-Max:2.5 W, D...

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Part number or familyEGP10G
Product groupModules

Product details

Manufactured byonsemi
Product groupModules
DescriptionON Semiconductor EGP10G Rectifier Diode, Output Current-Max:1 A, Forward Voltage-Max (VF):1.3 V, Reverse Recovery Time-Max:50 ns, Power Dissipation-Max:2.5 W, Diode Element Material:SILICON, Diode Type:RECTIFIER DIODE, Configuration:SINGLE, Surface Mount:NO, Rep Pk Reverse Voltage-Max:400 V, Number of Elements:1
DescriptionON Semiconductor EGP10G Discrete Semiconductor, DIODE GEN PURP 400V 1A DO41
DescriptionON Semiconductor EGP10G Rectifier Diode, Output Current-Max:1 A, Forward Voltage-Max (VF):1.3 V, Reverse Recovery Time-Max:50 ns, Power Dissipation-Max:2.5 W, Diode Element Material:SILICON, Diode Type:RECTIFIER DIODE, Configuration:SINGLE, Surface Mount:NO, Rep Pk Reverse Voltage-Max:400 V, Number of Elements:1

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Product group Modules Explore Modules Explore Rectifier Diodes Explore Semiconductors, Discretes
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