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EGP10C

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onsemi EGP10C

onsemi EGP10C overview

ON Semiconductor EGP10C Rectifier Diode, Output Current-Max:1 A, Forward Voltage-Max (VF):950 mV, Reverse Recovery Time-Max:50 ns, Power Dissipation-Max:2.5 W, ...

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Part number or familyEGP10C
Product groupModules

Product details

Manufactured byonsemi
Product groupModules
DescriptionON Semiconductor EGP10C Rectifier Diode, Output Current-Max:1 A, Forward Voltage-Max (VF):950 mV, Reverse Recovery Time-Max:50 ns, Power Dissipation-Max:2.5 W, Diode Element Material:SILICON, Diode Type:RECTIFIER DIODE, Configuration:SINGLE, Surface Mount:NO, Rep Pk Reverse Voltage-Max:150 V, Number of Elements:1
DescriptionON Semiconductor EGP10C Discrete Semiconductor, DIODE GEN PURP 150V 1A DO41
DescriptionON Semiconductor EGP10C Rectifier Diode, Output Current-Max:1 A, Forward Voltage-Max (VF):950 mV, Reverse Recovery Time-Max:50 ns, Power Dissipation-Max:2.5 W, Diode Element Material:SILICON, Diode Type:RECTIFIER DIODE, Configuration:SINGLE, Surface Mount:NO, Rep Pk Reverse Voltage-Max:150 V, Number of Elements:1

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Product group Modules Explore Modules Explore Rectifier Diodes
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