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BAS21TMR6T1G

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onsemi BAS21TMR6T1G

onsemi BAS21TMR6T1G overview

ON Semiconductor BAS21TMR6T1G Rectifier Diode, Output Current-Max:200 mA, Forward Voltage-Max (VF):1 V, Reverse Recovery Time-Max:50 ns, Reverse Current-Max:100...

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Part number or familyBAS21TMR6T1G
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Manufactured byonsemi
Product groupModules
DescriptionON Semiconductor BAS21TMR6T1G Rectifier Diode, Output Current-Max:200 mA, Forward Voltage-Max (VF):1 V, Reverse Recovery Time-Max:50 ns, Reverse Current-Max:100 µA, Power Dissipation-Max:311 mW, Diode Element Material:SILICON, Diode Type:RECTIFIER DIODE, Configuration:SEPARATE, 3 ELEMENTS, Surface Mount:YES, Rep Pk Reverse Voltage-Max:250 V, Number of Elements:3
DescriptionON Semiconductor BAS21TMR6T1G Rectifier Diode, Output Current-Max:200 mA, Forward Voltage-Max (VF):1 V, Reverse Recovery Time-Max:50 ns, Reverse Current-Max:100 µA, Power Dissipation-Max:311 mW, Diode Element Material:SILICON, Diode Type:RECTIFIER DIODE, Configuration:SEPARATE, 3 ELEMENTS, Surface Mount:YES, Rep Pk Reverse Voltage-Max:250 V, Number of Elements:3

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