Product details
Manufactured byonsemi
Product groupModules
DescriptionON Semiconductor 1N4448 Rectifier Diode, Output Current-Max:200 mA, Forward Voltage-Max (VF):620 mV, Reverse Recovery Time-Max:4 ns, Power Dissipation-Max:500 mW, Diode Element Material:SILICON, Diode Type:RECTIFIER DIODE, Configuration:SINGLE, Surface Mount:NO, Rep Pk Reverse Voltage-Max:100 V, Number of Elements:1
DescriptionON Semiconductor 1N4448 Discrete Semiconductor, DIODE GEN PURP 100V 200MA DO35
DescriptionON Semiconductor 1N4448 Rectifier Diode, Output Current-Max:200 mA, Forward Voltage-Max (VF):620 mV, Reverse Recovery Time-Max:4 ns, Power Dissipation-Max:500 mW, Diode Element Material:SILICON, Diode Type:RECTIFIER DIODE, Configuration:SINGLE, Surface Mount:NO, Rep Pk Reverse Voltage-Max:100 V, Number of Elements:1
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onsemi
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Modules
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