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DescriptionON Semiconductor NVB6413ANT4G Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:2, DS Breakdown Voltage-Min:100 V, Number of Elements:1, Drain Current-Max (Abs) (ID):42 A, Drain Current-Max (ID):42 A, Drain-source On Resistance-Max:28 mΩ
DescriptionON Semiconductor NVB6413ANT4G Discrete Semiconductor, MOSFET N-CH 100V 40A D2PAK
DescriptionON Semiconductor NVB6413ANT4G Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL,Surface Mount:YES,Configuration:SINGLE WITH BUILT-IN DIODE,Number of Terminals:2,DS Breakdown Voltage-Min:100 V,Number of Elements:1,Drain Current-Max (Abs) (ID):42 A,Drain Current-Max (ID):42 A,Drain-source On Resistance-Max:28 m?
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