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Manufactured byonsemi
Product groupModules
DescriptionON Semiconductor NTMS7N03R2 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:8, DS Breakdown Voltage-Min:30 V, Number of Elements:1, Drain Current-Max (Abs) (ID):4.38 A, Drain Current-Max (ID):4.8 A, Drain-source On Resistance-Max:23 mΩ
DescriptionON Semiconductor NTMS7N03R2 MOSFET, Single N-Channel Power MOSFET 30V, 7A, 23mΩ
DescriptionON Semiconductor NTMS7N03R2 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL,Surface Mount:YES,Configuration:SINGLE WITH BUILT-IN DIODE,Number of Terminals:8,DS Breakdown Voltage-Min:30 V,Number of Elements:1,Drain Current-Max (Abs) (ID):4.38 A,Drain Current-Max (ID):4.8 A,Drain-source On Resistance-Max:23 m?
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onsemi
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