onsemi NTMD6N02R2G overview
ON Semiconductor NTMD6N02R2G MOSFET, Trans MOSFET N-CH 20V 6.5A 8-Pin SOIC N T/R ON Semiconductor NTMD6N02R2G Power Field-effect Transistor, Polarity/Channel Ty...
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Manufactured byonsemi
Product typeIC Device
DescriptionON Semiconductor NTMD6N02R2G MOSFET, Trans MOSFET N-CH 20V 6.5A 8-Pin SOIC N T/R
DescriptionON Semiconductor NTMD6N02R2G Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL,Surface Mount:YES,Configuration:SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE,Number of Terminals:8,DS Breakdown Voltage-Min:20 V,Number of Elements:2,Drain Current-Max (Abs) (ID):3.92 A,Drain Current-Max (ID):3.92 A,Drain-source On Resistance-Max:35 m?
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IC Device
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