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Product groupModules
DescriptionON Semiconductor NTMD4N03R2 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE, Number of Terminals:8, DS Breakdown Voltage-Min:30 V, Number of Elements:2, Drain Current-Max (Abs) (ID):4 A, Drain Current-Max (ID):4 A, Drain-source On Resistance-Max:60 mΩ
DescriptionON Semiconductor NTMD4N03R2 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL,Surface Mount:YES,Configuration:SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE,Number of Terminals:8,DS Breakdown Voltage-Min:30 V,Number of Elements:2,Drain Current-Max (Abs) (ID):4 A,Drain Current-Max (ID):4 A,Drain-source On Resistance-Max:60 m?
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