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NTMD4102PR2G

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onsemi NTMD4102PR2G

onsemi NTMD4102PR2G overview

ON Semiconductor NTMD4102PR2G Power Field-effect Transistor, Polarity/Channel Type:P-CHANNEL, Surface Mount:YES, Configuration:SEPARATE, 2 ELEMENTS WITH BUILT-I...

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Part number or familyNTMD4102PR2G
Product groupModules

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Manufactured byonsemi
Product groupModules
DescriptionON Semiconductor NTMD4102PR2G Power Field-effect Transistor, Polarity/Channel Type:P-CHANNEL, Surface Mount:YES, Configuration:SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE, Number of Terminals:8, DS Breakdown Voltage-Min:20 V, Number of Elements:2, Drain Current-Max (ID):6.5 A, Drain-source On Resistance-Max:19 mΩ
DescriptionON Semiconductor NTMD4102PR2G Power Field-effect Transistor, Polarity/Channel Type:P-CHANNEL, Surface Mount:YES, Configuration:SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE, Number of Terminals:8, DS Breakdown Voltage-Min:20 V, Number of Elements:2, Drain Current-Max (ID):6.5 A, Drain-source On Resistance-Max:19 mΩ

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