NTMD3N08LG by onsemi | StockCheck - Aggregating Everything

onsemi NTMD3N08LG overview

ON Semiconductor NTMD3N08LG Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SEPARATE, 2 ELEMENTS WITH BUILT-IN ...

Manufactured byonsemi

Part number or familyNTMD3N08LG

Product groupModules

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Manufactured byonsemi

Product groupModules

DescriptionON Semiconductor NTMD3N08LG Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE, Number of Terminals:8, DS Breakdown Voltage-Min:80 V, Number of Elements:2, Drain Current-Max (ID):2.3 A, Drain-source On Resistance-Max:215 mΩ

DescriptionON Semiconductor NTMD3N08LG Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL,Surface Mount:YES,Configuration:SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE,Number of Terminals:8,DS Breakdown Voltage-Min:80 V,Number of Elements:2,Drain Current-Max (ID):2.3 A,Drain-source On Resistance-Max:215 m?

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Manufactured by onsemi View onsemi profile

Product group Modules Explore Modules Explore Transistor Explore Power Field-effect Transistors

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