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Manufactured byonsemi
Product groupModules
DescriptionON Semiconductor NTMD3N08 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SEPARATE, 2 ELEMENTS, Number of Terminals:8, DS Breakdown Voltage-Min:80 V, Number of Elements:2, Drain-source On Resistance-Max:185 mΩ
DescriptionON Semiconductor NTMD3N08 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SEPARATE, 2 ELEMENTS, Number of Terminals:8, DS Breakdown Voltage-Min:80 V, Number of Elements:2, Drain-source On Resistance-Max:185 mΩ
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onsemi
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