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NTLTD7900NR2G

onsemi · Modules

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onsemi NTLTD7900NR2G

onsemi NTLTD7900NR2G overview

ON Semiconductor NTLTD7900NR2G Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:COMMON DRAIN, 2 ELEMENTS WITH BU...

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Part number or familyNTLTD7900NR2G
Product groupModules

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Manufactured byonsemi
Product groupModules
DescriptionON Semiconductor NTLTD7900NR2G Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR, Number of Terminals:8, DS Breakdown Voltage-Min:20 V, Number of Elements:2, Drain Current-Max (Abs) (ID):6 A, Drain Current-Max (ID):6 A, Drain-source On Resistance-Max:26 mΩ
DescriptionON Semiconductor NTLTD7900NR2G Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR, Number of Terminals:8, DS Breakdown Voltage-Min:20 V, Number of Elements:2, Drain Current-Max (Abs) (ID):6 A, Drain Current-Max (ID):6 A, Drain-source On Resistance-Max:26 mΩ

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