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NTLJS4159NT1G

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onsemi NTLJS4159NT1G

onsemi NTLJS4159NT1G overview

ON Semiconductor NTLJS4159NT1G Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE, Numb...

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Part number or familyNTLJS4159NT1G
Product groupModules

Product details

Manufactured byonsemi
Product groupModules
DescriptionON Semiconductor NTLJS4159NT1G Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:6, DS Breakdown Voltage-Min:30 V, Number of Elements:1, Drain Current-Max (ID):3.6 A, Drain-source On Resistance-Max:45 mΩ
DescriptionON Semiconductor NTLJS4159NT1G Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:6, DS Breakdown Voltage-Min:30 V, Number of Elements:1, Drain Current-Max (ID):3.6 A, Drain-source On Resistance-Max:45 mΩ

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Product group Modules Explore Modules Explore Transistor Explore Power Field-effect Transistors
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