NTLJD4150PTBG by onsemi | StockCheck - Aggregating Everything

onsemi NTLJD4150PTBG overview

ON Semiconductor NTLJD4150PTBG Power Field-effect Transistor, Polarity/Channel Type:P-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE, Numb...

Manufactured byonsemi

Part number or familyNTLJD4150PTBG

Product groupModules

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Manufactured byonsemi

Product groupModules

DescriptionON Semiconductor NTLJD4150PTBG Power Field-effect Transistor, Polarity/Channel Type:P-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:6, DS Breakdown Voltage-Min:30 V, Number of Elements:1, Drain Current-Max (Abs) (ID):3.4 A, Drain Current-Max (ID):2.7 A, Drain-source On Resistance-Max:135 mΩ

DescriptionON Semiconductor NTLJD4150PTBG Power Field-effect Transistor, Polarity/Channel Type:P-CHANNEL,Surface Mount:YES,Configuration:SINGLE WITH BUILT-IN DIODE,Number of Terminals:6,DS Breakdown Voltage-Min:30 V,Number of Elements:1,Drain Current-Max (Abs) (ID):3.4 A,Drain Current-Max (ID):2.7 A,Drain-source On Resistance-Max:135 m?

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Manufactured by onsemi View onsemi profile

Product group Modules Explore Modules Explore Transistor Explore Power Field-effect Transistors

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