onsemi NTLJD3115PT1G overview
ON Semiconductor NTLJD3115PT1G Power Field-effect Transistor, Polarity/Channel Type:P-CHANNEL, Surface Mount:YES, Configuration:SEPARATE, 2 ELEMENTS WITH BUILT-...
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Manufactured byonsemi
Product typeTransistor
DescriptionON Semiconductor NTLJD3115PT1G Power Field-effect Transistor, Polarity/Channel Type:P-CHANNEL, Surface Mount:YES, Configuration:SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE, Number of Terminals:6, DS Breakdown Voltage-Min:20 V, Number of Elements:2, Drain Current-Max (Abs) (ID):3.3 A, Drain Current-Max (ID):2.3 A, Drain-source On Resistance-Max:135 mΩ
DescriptionON Semiconductor NTLJD3115PT1G Power Field-effect Transistor, Polarity/Channel Type:P-CHANNEL, Surface Mount:YES, Configuration:SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE, Number of Terminals:6, DS Breakdown Voltage-Min:20 V, Number of Elements:2, Drain Current-Max (Abs) (ID):3.3 A, Drain Current-Max (ID):2.3 A, Drain-source On Resistance-Max:135 mΩ
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