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Manufactured byON
Product groupModules
DescriptionON Semiconductor NTD80N02-1G Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:3, DS Breakdown Voltage-Min:24 V, Number of Elements:1, Drain Current-Max (Abs) (ID):80 A, Drain Current-Max (ID):80 A, Drain-source On Resistance-Max:5.8 mΩ
DescriptionON Semiconductor NTD80N02-1G Discrete Semiconductor, MOSFET N-CH 24V 80A IPAK
DescriptionON Semiconductor NTD80N02-1G Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:3, DS Breakdown Voltage-Min:24 V, Number of Elements:1, Drain Current-Max (Abs) (ID):80 A, Drain Current-Max (ID):80 A, Drain-source On Resistance-Max:5.8 mΩ
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