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Product groupModules
DescriptionON Semiconductor NTD78N03T4 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:2, DS Breakdown Voltage-Min:25 V, Number of Elements:1, Drain Current-Max (ID):11.4 A, Drain-source On Resistance-Max:6 mΩ
DescriptionON Semiconductor NTD78N03T4 Discrete Semiconductor, MOSFET N-CH 25V 11.4A DPAK
DescriptionON Semiconductor NTD78N03T4 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL,Surface Mount:YES,Configuration:SINGLE WITH BUILT-IN DIODE,Number of Terminals:2,DS Breakdown Voltage-Min:25 V,Number of Elements:1,Drain Current-Max (ID):11.4 A,Drain-source On Resistance-Max:6 m?
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