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NTD6416AN-1G

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onsemi NTD6416AN-1G

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ON Semiconductor NTD6416AN-1G Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO, Configuration:SINGLE WITH BUILT-IN DIODE, Number...

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Part number or familyNTD6416AN-1G
Product groupModules

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Manufactured byonsemi
Product groupModules
DescriptionON Semiconductor NTD6416AN-1G Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:3, DS Breakdown Voltage-Min:100 V, Number of Elements:1, Drain Current-Max (Abs) (ID):17 A, Drain Current-Max (ID):17 A, Drain-source On Resistance-Max:81 mΩ
DescriptionON Semiconductor NTD6416AN-1G Discrete Semiconductor, MOSFET N-CH 100V 17A IPAK
DescriptionON Semiconductor NTD6416AN-1G Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:3, DS Breakdown Voltage-Min:100 V, Number of Elements:1, Drain Current-Max (Abs) (ID):17 A, Drain Current-Max (ID):17 A, Drain-source On Resistance-Max:81 mΩ

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