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NTD4N60-1

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onsemi NTD4N60-1

onsemi NTD4N60-1 overview

ON Semiconductor NTD4N60-1 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO, Configuration:SINGLE WITH BUILT-IN DIODE, Number of...

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Part number or familyNTD4N60-1
Product groupModules

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Manufactured byonsemi
Product groupModules
DescriptionON Semiconductor NTD4N60-1 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:3, DS Breakdown Voltage-Min:600 V, Number of Elements:1, Drain Current-Max (Abs) (ID):4 A, Drain Current-Max (ID):4 A, Drain-source On Resistance-Max:2.4 Ω
DescriptionON Semiconductor NTD4N60-1 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL,Surface Mount:NO,Configuration:SINGLE WITH BUILT-IN DIODE,Number of Terminals:3,DS Breakdown Voltage-Min:600 V,Number of Elements:1,Drain Current-Max (Abs) (ID):4 A,Drain Current-Max (ID):4 A,Drain-source On Resistance-Max:2.4 ?

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Product group Modules Explore Modules Explore Transistor Explore Power Field-effect Transistors
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