onsemi NTD4910N-1G overview
NTD4910N-1G is a transistor made by onsemi. ON Semiconductor NTD4910N-1G Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:3, DS Breakdown Voltage-Min:30 V, Number of Elements:1, Drain Current-Max (ID):8.2 A, Drain-source On…
Product details
Manufactured byonsemi
Product typeTransistor
DescriptionON Semiconductor NTD4910N-1G Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:3, DS Breakdown Voltage-Min:30 V, Number of Elements:1, Drain Current-Max (ID):8.2 A, Drain-source On Resistance-Max:13 mΩ
DescriptionON Semiconductor NTD4910N-1G Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL,Surface Mount:NO,Configuration:SINGLE WITH BUILT-IN DIODE,Number of Terminals:3,DS Breakdown Voltage-Min:30 V,Number of Elements:1,Drain Current-Max (ID):8.2 A,Drain-source On Resistance-Max:13 m?
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