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NTD4813N-35G

onsemi · Transistor

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onsemi NTD4813N-35G

onsemi NTD4813N-35G overview

ON Semiconductor NTD4813N-35G Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO, Configuration:SINGLE WITH BUILT-IN DIODE, Number...

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Part number or familyNTD4813N-35G
Product typeTransistor

Product details

Manufactured byonsemi
Product typeTransistor
DescriptionON Semiconductor NTD4813N-35G Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:3, DS Breakdown Voltage-Min:30 V, Number of Elements:1, Drain Current-Max (Abs) (ID):40 A, Drain Current-Max (ID):7.6 A, Drain-source On Resistance-Max:24 mΩ
DescriptionON Semiconductor NTD4813N-35G Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:3, DS Breakdown Voltage-Min:30 V, Number of Elements:1, Drain Current-Max (Abs) (ID):40 A, Drain Current-Max (ID):7.6 A, Drain-source On Resistance-Max:24 mΩ

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Product type Transistor Explore Transistor Explore Power Field-effect Transistors
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