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DescriptionON Semiconductor NTD3817NT4G Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:2, DS Breakdown Voltage-Min:16 V, Number of Elements:1, Drain Current-Max (Abs) (ID):34.5 A, Drain Current-Max (ID):7.6 A, Drain-source On Resistance-Max:29 mΩ
DescriptionON Semiconductor NTD3817NT4G Discrete Semiconductor, MOSFET N-CH 16V 7.6A DPAK
DescriptionON Semiconductor NTD3817NT4G Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:2, DS Breakdown Voltage-Min:16 V, Number of Elements:1, Drain Current-Max (Abs) (ID):34.5 A, Drain Current-Max (ID):7.6 A, Drain-source On Resistance-Max:29 mΩ
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