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NTD3813NT4G

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onsemi NTD3813NT4G

onsemi NTD3813NT4G overview

ON Semiconductor NTD3813NT4G Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE, Number...

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Part number or familyNTD3813NT4G
Product groupModules

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Manufactured byonsemi
Product groupModules
DescriptionON Semiconductor NTD3813NT4G Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:2, DS Breakdown Voltage-Min:16 V, Number of Elements:1, Drain Current-Max (Abs) (ID):51 A, Drain Current-Max (ID):9.6 A, Drain-source On Resistance-Max:14.5 mΩ
DescriptionON Semiconductor NTD3813NT4G Discrete Semiconductor, MOSFET N-CH 16V 9.6A DPAK
DescriptionON Semiconductor NTD3813NT4G Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:2, DS Breakdown Voltage-Min:16 V, Number of Elements:1, Drain Current-Max (Abs) (ID):51 A, Drain Current-Max (ID):9.6 A, Drain-source On Resistance-Max:14.5 mΩ

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