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NTD30N02G

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onsemi NTD30N02G

onsemi NTD30N02G overview

ON Semiconductor NTD30N02G Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE, Number o...

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Part number or familyNTD30N02G
Product groupModules

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Manufactured byonsemi
Product groupModules
DescriptionON Semiconductor NTD30N02G Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:2, DS Breakdown Voltage-Min:24 V, Number of Elements:1, Drain Current-Max (Abs) (ID):30 A, Drain Current-Max (ID):30 A, Drain-source On Resistance-Max:14.5 mΩ
DescriptionON Semiconductor NTD30N02G Discrete Semiconductor, MOSFET N-CH 24V 30A DPAK
DescriptionON Semiconductor NTD30N02G Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:2, DS Breakdown Voltage-Min:24 V, Number of Elements:1, Drain Current-Max (Abs) (ID):30 A, Drain Current-Max (ID):30 A, Drain-source On Resistance-Max:14.5 mΩ

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