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NTD3055L170-1

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onsemi NTD3055L170-1

onsemi NTD3055L170-1 overview

ON Semiconductor NTD3055L170-1 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO, Configuration:SINGLE WITH BUILT-IN DIODE, Numbe...

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Part number or familyNTD3055L170-1
Product groupModules

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Manufactured byonsemi
Product groupModules
DescriptionON Semiconductor NTD3055L170-1 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:3, DS Breakdown Voltage-Min:60 V, Number of Elements:1, Drain Current-Max (Abs) (ID):9 A, Drain Current-Max (ID):9 A, Drain-source On Resistance-Max:170 mΩ
DescriptionON Semiconductor NTD3055L170-1 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL,Surface Mount:NO,Configuration:SINGLE WITH BUILT-IN DIODE,Number of Terminals:3,DS Breakdown Voltage-Min:60 V,Number of Elements:1,Drain Current-Max (Abs) (ID):9 A,Drain Current-Max (ID):9 A,Drain-source On Resistance-Max:170 m?

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