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NTD20N06-1

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onsemi NTD20N06-1

onsemi NTD20N06-1 overview

ON Semiconductor NTD20N06-1 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO, Configuration:SINGLE WITH BUILT-IN DIODE, Number o...

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Part number or familyNTD20N06-1
Product groupModules

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Manufactured byonsemi
Product groupModules
DescriptionON Semiconductor NTD20N06-1 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:3, DS Breakdown Voltage-Min:60 V, Number of Elements:1, Drain Current-Max (Abs) (ID):20 A, Drain Current-Max (ID):20 A, Drain-source On Resistance-Max:46 mΩ
DescriptionON Semiconductor NTD20N06-1 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL,Surface Mount:NO,Configuration:SINGLE WITH BUILT-IN DIODE,Number of Terminals:3,DS Breakdown Voltage-Min:60 V,Number of Elements:1,Drain Current-Max (Abs) (ID):20 A,Drain Current-Max (ID):20 A,Drain-source On Resistance-Max:46 m?

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