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NTD110N02RT4G

onsemi · Modules

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onsemi NTD110N02RT4G

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ON Semiconductor NTD110N02RT4G Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE, Numb...

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Part number or familyNTD110N02RT4G
Product groupModules

Product details

Manufactured byonsemi
Product groupModules
DescriptionON Semiconductor NTD110N02RT4G Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:2, DS Breakdown Voltage-Min:24 V, Number of Elements:1, Drain Current-Max (Abs) (ID):32 A, Drain Current-Max (ID):12.5 A, Drain-source On Resistance-Max:6.2 mΩ
DescriptionON Semiconductor NTD110N02RT4G Discrete Semiconductor, MOSFET N-CH 24V 12.5A DPAK
DescriptionON Semiconductor NTD110N02RT4G Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:2, DS Breakdown Voltage-Min:24 V, Number of Elements:1, Drain Current-Max (Abs) (ID):32 A, Drain Current-Max (ID):12.5 A, Drain-source On Resistance-Max:6.2 mΩ

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