onsemi NTD110N02R1 overview
NTD110N02R1 is a transistor made by onsemi. ON Semiconductor NTD110N02R1 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:2, DS Breakdown Voltage-Min:24 V, Number of Elements:1, Drain Current-Max (ID):32 A, Drain-source On…
Product details
Manufactured byonsemi
Product typeTransistor
DescriptionON Semiconductor NTD110N02R1 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:2, DS Breakdown Voltage-Min:24 V, Number of Elements:1, Drain Current-Max (ID):32 A, Drain-source On Resistance-Max:6.2 mΩ
DescriptionON Semiconductor NTD110N02R-1 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:3, DS Breakdown Voltage-Min:24 V, Number of Elements:1, Drain Current-Max (Abs) (ID):32 A, Drain Current-Max (ID):32 A, Drain-source On Resistance-Max:6.2 mΩ
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