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NTB6412ANT4G

onsemi ยท Modules

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onsemi NTB6412ANT4G

onsemi NTB6412ANT4G overview

ON Semiconductor NTB6412ANT4G MOSFET, Trans MOSFET N-CH 100V 58A 3-Pin(2+Tab) D2PAK T/R ON Semiconductor NTB6412ANT4G Discrete Semiconductor, MOSFET N-CH 100V 5...

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Part number or familyNTB6412ANT4G
Product groupModules

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Manufactured byonsemi
Product groupModules
DescriptionON Semiconductor NTB6412ANT4G MOSFET, Trans MOSFET N-CH 100V 58A 3-Pin(2+Tab) D2PAK T/R
DescriptionON Semiconductor NTB6412ANT4G Discrete Semiconductor, MOSFET N-CH 100V 58A D2PAK
DescriptionON Semiconductor NTB6412ANT4G Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL,Surface Mount:YES,Configuration:SINGLE WITH BUILT-IN DIODE,Number of Terminals:2,DS Breakdown Voltage-Min:100 V,Number of Elements:1,Drain Current-Max (Abs) (ID):58 A,Drain Current-Max (ID):58 A,Drain-source On Resistance-Max:18.2 m?

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Product group Modules Explore Modules Explore Transistors and Thyristors Explore FET Transistors
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