Product details
Manufactured byonsemi
Product groupModules
DescriptionON Semiconductor NTB60N06 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:2, DS Breakdown Voltage-Min:60 V, Number of Elements:1, Drain Current-Max (Abs) (ID):60 A, Drain Current-Max (ID):60 A, Drain-source On Resistance-Max:14 mΩ
DescriptionON Semiconductor NTB60N06 MOSFET, Single N-Channel Power MOSFET 60V 60A 14 mΩ
DescriptionON Semiconductor NTB60N06 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:2, DS Breakdown Voltage-Min:60 V, Number of Elements:1, Drain Current-Max (Abs) (ID):60 A, Drain Current-Max (ID):60 A, Drain-source On Resistance-Max:14 mΩ
Manufacturer, product group, and supply
See who makes this product, where it belongs, and where available inventory may be listed.
Manufactured by
onsemi
View onsemi profile
Available from
Sourcing support available
Start a sourcing request