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NTB5860NT4G

onsemi ยท Modules

onsemi NTB5860NT4G

onsemi NTB5860NT4G overview

ON Semiconductor NTB5860NT4G MOSFET, Trans MOSFET N-CH 60V 169A 3-Pin(2+Tab) D2PAK T/R ON Semiconductor NTB5860NT4G Power Field-effect Transistor, Polarity/Chan...

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Part number or familyNTB5860NT4G
Product groupModules

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Manufactured byonsemi
Product groupModules
DescriptionON Semiconductor NTB5860NT4G MOSFET, Trans MOSFET N-CH 60V 169A 3-Pin(2+Tab) D2PAK T/R
DescriptionON Semiconductor NTB5860NT4G Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL,Surface Mount:YES,Configuration:SINGLE WITH BUILT-IN DIODE,Number of Terminals:2,DS Breakdown Voltage-Min:60 V,Number of Elements:1,Drain Current-Max (Abs) (ID):220 A,Drain Current-Max (ID):103 A,Drain-source On Resistance-Max:3 m?

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