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NTB30N06G

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onsemi NTB30N06G

onsemi NTB30N06G overview

ON Semiconductor NTB30N06G Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE, Number o...

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Part number or familyNTB30N06G
Product groupModules

Product details

Manufactured byonsemi
Product groupModules
DescriptionON Semiconductor NTB30N06G Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:2, DS Breakdown Voltage-Min:60 V, Number of Elements:1, Drain Current-Max (Abs) (ID):27 A, Drain Current-Max (ID):27 A, Drain-source On Resistance-Max:42 mΩ
DescriptionON Semiconductor NTB30N06G Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:2, DS Breakdown Voltage-Min:60 V, Number of Elements:1, Drain Current-Max (Abs) (ID):27 A, Drain Current-Max (ID):27 A, Drain-source On Resistance-Max:42 mΩ

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