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NTB13N10

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onsemi NTB13N10

onsemi NTB13N10 overview

ON Semiconductor NTB13N10 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE, Number of...

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Part number or familyNTB13N10
Product groupModules

Product details

Manufactured byonsemi
Product groupModules
DescriptionON Semiconductor NTB13N10 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:2, DS Breakdown Voltage-Min:100 V, Number of Elements:1, Drain Current-Max (Abs) (ID):13 A, Drain Current-Max (ID):13 A, Drain-source On Resistance-Max:165 mΩ
DescriptionON Semiconductor NTB13N10 Discrete Semiconductor, MOSFET N-CH 100V 13A D2PAK
DescriptionON Semiconductor NTB13N10 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:2, DS Breakdown Voltage-Min:100 V, Number of Elements:1, Drain Current-Max (Abs) (ID):13 A, Drain Current-Max (ID):13 A, Drain-source On Resistance-Max:165 mΩ

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Product group Modules Explore Modules Explore Transistor Explore Power Field-effect Transistors
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