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NILMS4501NR2G

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onsemi NILMS4501NR2G

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ON Semiconductor NILMS4501NR2G Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:CURRENT MIRROR WITH BUILT-IN DIO...

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Part number or familyNILMS4501NR2G
Product groupModules

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Manufactured byonsemi
Product groupModules
DescriptionON Semiconductor NILMS4501NR2G Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:CURRENT MIRROR WITH BUILT-IN DIODE, Number of Terminals:4, DS Breakdown Voltage-Min:24 V, Number of Elements:1, Drain Current-Max (Abs) (ID):9.5 A, Drain Current-Max (ID):9.5 A, Drain-source On Resistance-Max:16 mΩ
DescriptionON Semiconductor NILMS4501NR2G Discrete Semiconductor, MOSFET N-CH 24V 9.5A 4-LLP
DescriptionON Semiconductor NILMS4501NR2G Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:CURRENT MIRROR WITH BUILT-IN DIODE, Number of Terminals:4, DS Breakdown Voltage-Min:24 V, Number of Elements:1, Drain Current-Max (Abs) (ID):9.5 A, Drain Current-Max (ID):9.5 A, Drain-source On Resistance-Max:16 mΩ

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