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NDB5060L

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onsemi NDB5060L

onsemi NDB5060L overview

ON Semiconductor NDB5060L Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE, Number of...

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Part number or familyNDB5060L
Product groupModules

Product details

Manufactured byonsemi
Product groupModules
DescriptionON Semiconductor NDB5060L Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:2, DS Breakdown Voltage-Min:60 V, Number of Elements:1, Drain Current-Max (Abs) (ID):26 A, Drain Current-Max (ID):26 A, Drain-source On Resistance-Max:50 mΩ
DescriptionON Semiconductor NDB5060L MOSFET, N-Channel Logic Level Enhancement Mode Field Effect Transistor 60V, 26A, 35mΩ
DescriptionON Semiconductor NDB5060L Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:2, DS Breakdown Voltage-Min:60 V, Number of Elements:1, Drain Current-Max (Abs) (ID):26 A, Drain Current-Max (ID):26 A, Drain-source On Resistance-Max:50 mΩ

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