MVDF1N05ER2G by onsemi | StockCheck - Aggregating Everything

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ON Semiconductor MVDF1N05ER2G Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SEPARATE, 2 ELEMENTS WITH BUILT-I...

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Part number or familyMVDF1N05ER2G

Product groupModules

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Manufactured byonsemi

Product groupModules

DescriptionON Semiconductor MVDF1N05ER2G Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE, Number of Terminals:8, DS Breakdown Voltage-Min:50 V, Number of Elements:2, Drain Current-Max (Abs) (ID):2 A, Drain Current-Max (ID):2 A, Drain-source On Resistance-Max:300 mΩ

DescriptionON Semiconductor MVDF1N05ER2G Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL,Surface Mount:YES,Configuration:SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE,Number of Terminals:8,DS Breakdown Voltage-Min:50 V,Number of Elements:2,Drain Current-Max (Abs) (ID):2 A,Drain Current-Max (ID):2 A,Drain-source On Resistance-Max:300 m?

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Product group Modules Explore Modules Explore Transistor Explore Power Field-effect Transistors

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