onsemi MTW35N15EG overview
ON Semiconductor MTW35N15EG Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO, Configuration:SINGLE WITH BUILT-IN DIODE, Number o...
Product details
Manufactured byonsemi
Product typeTransistor
DescriptionON Semiconductor MTW35N15EG Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:3, DS Breakdown Voltage-Min:150 V, Number of Elements:1, Drain Current-Max (ID):35 A, Drain-source On Resistance-Max:50 mΩ
DescriptionON Semiconductor MTW35N15EG Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL,Surface Mount:NO,Configuration:SINGLE WITH BUILT-IN DIODE,Number of Terminals:3,DS Breakdown Voltage-Min:150 V,Number of Elements:1,Drain Current-Max (ID):35 A,Drain-source On Resistance-Max:50 m?
Manufacturer, product group, and supply
See who makes this product, where it belongs, and where available inventory may be listed.
Manufactured by
onsemi
View onsemi profile
Available from
Sourcing support available
Start a sourcing request
