MTD9N10EG by onsemi | StockCheck - Aggregating Everything

onsemi MTD9N10EG overview

ON Semiconductor MTD9N10EG Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE, Number o...

Manufactured byonsemi

Part number or familyMTD9N10EG

Product groupModules

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Manufactured byonsemi

Product groupModules

DescriptionON Semiconductor MTD9N10EG Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:2, DS Breakdown Voltage-Min:100 V, Number of Elements:1, Drain Current-Max (ID):9 A, Drain-source On Resistance-Max:250 mΩ

DescriptionON Semiconductor MTD9N10EG Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL,Surface Mount:YES,Configuration:SINGLE WITH BUILT-IN DIODE,Number of Terminals:2,DS Breakdown Voltage-Min:100 V,Number of Elements:1,Drain Current-Max (ID):9 A,Drain-source On Resistance-Max:250 m?

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Product group Modules Explore Modules Explore Transistor Explore Power Field-effect Transistors

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