MTD2N50E1 by onsemi | StockCheck - Aggregating Everything

onsemi MTD2N50E1 overview

ON Semiconductor MTD2N50E1 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE, Number o...

Manufactured byonsemi

Part number or familyMTD2N50E1

Product groupModules

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Manufactured byonsemi

Product groupModules

DescriptionON Semiconductor MTD2N50E1 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:2, DS Breakdown Voltage-Min:500 V, Number of Elements:1, Drain Current-Max (Abs) (ID):2 A, Drain Current-Max (ID):2 A, Drain-source On Resistance-Max:3.6 Ω

DescriptionON Semiconductor MTD2N50E1 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL,Surface Mount:YES,Configuration:SINGLE WITH BUILT-IN DIODE,Number of Terminals:2,DS Breakdown Voltage-Min:500 V,Number of Elements:1,Drain Current-Max (Abs) (ID):2 A,Drain Current-Max (ID):2 A,Drain-source On Resistance-Max:3.6 ?

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Product group Modules Explore Modules Explore Transistor Explore Power Field-effect Transistors

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