MTD20P06HDLT4G by onsemi | StockCheck - Aggregating Everything

onsemi MTD20P06HDLT4G overview

ON Semiconductor MTD20P06HDLT4G Power Field-effect Transistor, Polarity/Channel Type:P-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE, Num...

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Part number or familyMTD20P06HDLT4G

Product groupModules

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Manufactured byonsemi

Product groupModules

DescriptionON Semiconductor MTD20P06HDLT4G Power Field-effect Transistor, Polarity/Channel Type:P-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:2, DS Breakdown Voltage-Min:60 V, Number of Elements:1, Drain Current-Max (Abs) (ID):15 A, Drain Current-Max (ID):15 A, Drain-source On Resistance-Max:175 mΩ

DescriptionON Semiconductor MTD20P06HDLT4G Power Field-effect Transistor, Polarity/Channel Type:P-CHANNEL,Surface Mount:YES,Configuration:SINGLE WITH BUILT-IN DIODE,Number of Terminals:2,DS Breakdown Voltage-Min:60 V,Number of Elements:1,Drain Current-Max (Abs) (ID):15 A,Drain Current-Max (ID):15 A,Drain-source On Resistance-Max:175 m?

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Product group Modules Explore Modules Explore Transistor Explore Power Field-effect Transistors

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