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MTD1N50E

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onsemi MTD1N50E

onsemi MTD1N50E overview

ON Semiconductor MTD1N50E Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE, Number of...

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Part number or familyMTD1N50E
Product groupModules

Product details

Manufactured byonsemi
Product groupModules
DescriptionON Semiconductor MTD1N50E Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:2, DS Breakdown Voltage-Min:500 V, Number of Elements:1, Drain Current-Max (Abs) (ID):1 A, Drain Current-Max (ID):1 A, Drain-source On Resistance-Max:5 Ω
DescriptionON Semiconductor MTD1N50E Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:2, DS Breakdown Voltage-Min:500 V, Number of Elements:1, Drain Current-Max (Abs) (ID):1 A, Drain Current-Max (ID):1 A, Drain-source On Resistance-Max:5 Ω

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Product group Modules Explore Modules Explore Transistor Explore Power Field-effect Transistors
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