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MTB60N05HDT4

onsemi · Transistor

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onsemi MTB60N05HDT4

onsemi MTB60N05HDT4 overview

ON Semiconductor MTB60N05HDT4 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE, Numbe...

Manufactured byonsemi
Part number or familyMTB60N05HDT4
Product typeTransistor

Product details

Manufactured byonsemi
Product typeTransistor
DescriptionON Semiconductor MTB60N05HDT4 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:2, DS Breakdown Voltage-Min:50 V, Number of Elements:1, Drain Current-Max (ID):60 A, Drain-source On Resistance-Max:14 mΩ
DescriptionON Semiconductor MTB60N05HDT4 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:2, DS Breakdown Voltage-Min:50 V, Number of Elements:1, Drain Current-Max (ID):60 A, Drain-source On Resistance-Max:14 mΩ

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Product type Transistor Explore Transistor Explore Power Field-effect Transistors
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