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Manufactured byonsemi
Product groupModules
DescriptionON Semiconductor MTB60N05HDG Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:2, DS Breakdown Voltage-Min:50 V, Number of Elements:1, Drain Current-Max (ID):60 A, Drain-source On Resistance-Max:14 mΩ
DescriptionON Semiconductor MTB60N05HDG Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:2, DS Breakdown Voltage-Min:50 V, Number of Elements:1, Drain Current-Max (ID):60 A, Drain-source On Resistance-Max:14 mΩ
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