MTB52N06VLT4 by onsemi | StockCheck - Aggregating Everything

onsemi MTB52N06VLT4 overview

ON Semiconductor MTB52N06VLT4 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE, Numbe...

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Part number or familyMTB52N06VLT4

Product groupModules

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Manufactured byonsemi

Product groupModules

DescriptionON Semiconductor MTB52N06VLT4 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:2, DS Breakdown Voltage-Min:60 V, Number of Elements:1, Drain Current-Max (Abs) (ID):52 A, Drain Current-Max (ID):52 A, Drain-source On Resistance-Max:25 mΩ

DescriptionON Semiconductor MTB52N06VLT4 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL,Surface Mount:YES,Configuration:SINGLE WITH BUILT-IN DIODE,Number of Terminals:2,DS Breakdown Voltage-Min:60 V,Number of Elements:1,Drain Current-Max (Abs) (ID):52 A,Drain Current-Max (ID):52 A,Drain-source On Resistance-Max:25 m?

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Product group Modules Explore Modules Explore Transistor Explore Power Field-effect Transistors

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