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MTB40N10E

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onsemi MTB40N10E

onsemi MTB40N10E overview

ON Semiconductor MTB40N10E Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE, Number o...

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Part number or familyMTB40N10E
Product groupModules

Product details

Manufactured byonsemi
Product groupModules
DescriptionON Semiconductor MTB40N10E Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:2, DS Breakdown Voltage-Min:100 V, Number of Elements:1, Drain Current-Max (Abs) (ID):40 A, Drain Current-Max (ID):40 A, Drain-source On Resistance-Max:40 mΩ
DescriptionON Semiconductor MTB40N10E Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:2, DS Breakdown Voltage-Min:100 V, Number of Elements:1, Drain Current-Max (Abs) (ID):40 A, Drain Current-Max (ID):40 A, Drain-source On Resistance-Max:40 mΩ

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