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MTB30P06VT4G

onsemi ยท Transistors and Thyristors

onsemi MTB30P06VT4G

onsemi MTB30P06VT4G overview

ON Semiconductor MTB30P06VT4G MOSFET, Trans MOSFET P-CH 60V 30A 3-Pin(2+Tab) D2PAK T/R ON Semiconductor MTB30P06VT4G Power Field-effect Transistor, Polarity/Cha...

Manufactured byonsemi
Part number or familyMTB30P06VT4G
Product typeTransistors and Thyristors

Product details

Manufactured byonsemi
Product typeTransistors and Thyristors
DescriptionON Semiconductor MTB30P06VT4G MOSFET, Trans MOSFET P-CH 60V 30A 3-Pin(2+Tab) D2PAK T/R
DescriptionON Semiconductor MTB30P06VT4G Power Field-effect Transistor, Polarity/Channel Type:P-CHANNEL,Surface Mount:YES,Configuration:SINGLE WITH BUILT-IN DIODE,Number of Terminals:2,DS Breakdown Voltage-Min:60 V,Number of Elements:1,Drain Current-Max (Abs) (ID):30 A,Drain Current-Max (ID):30 A,Drain-source On Resistance-Max:80 m?

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