onsemi MTB16N25ET4 overview
MTB16N25ET4 is a transistor made by onsemi. ON Semiconductor MTB16N25ET4 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:2, DS Breakdown Voltage-Min:250 V, Number of Elements:1, Drain Current-Max (Abs) (ID):16 A, Drain…
Product details
Manufactured byonsemi
Product typeTransistor
DescriptionON Semiconductor MTB16N25ET4 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:2, DS Breakdown Voltage-Min:250 V, Number of Elements:1, Drain Current-Max (Abs) (ID):16 A, Drain Current-Max (ID):16 A, Drain-source On Resistance-Max:250 mΩ
DescriptionON Semiconductor MTB16N25ET4 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:2, DS Breakdown Voltage-Min:250 V, Number of Elements:1, Drain Current-Max (Abs) (ID):16 A, Drain Current-Max (ID):16 A, Drain-source On Resistance-Max:250 mΩ
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