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MTB16N25E

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onsemi MTB16N25E

onsemi MTB16N25E overview

ON Semiconductor MTB16N25E Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE, Number o...

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Part number or familyMTB16N25E
Product groupModules

Product details

Manufactured byonsemi
Product groupModules
DescriptionON Semiconductor MTB16N25E Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:2, DS Breakdown Voltage-Min:250 V, Number of Elements:1, Drain Current-Max (Abs) (ID):16 A, Drain Current-Max (ID):16 A, Drain-source On Resistance-Max:250 mΩ
DescriptionON Semiconductor MTB16N25E Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:2, DS Breakdown Voltage-Min:250 V, Number of Elements:1, Drain Current-Max (Abs) (ID):16 A, Drain Current-Max (ID):16 A, Drain-source On Resistance-Max:250 mΩ

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Product group Modules Explore Modules Explore Transistor Explore Power Field-effect Transistors
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